STGD3NB60K 데이터 시트보기 (PDF) - STMicroelectronics

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STGD3NB60K

N-CHANNEL 6A - 600V - TO-220 / DPAK SHORT CIRCUIT PROOF PowerMESH™ IGBT

STMicroelectronics 

STGP3NB60K - STGD3NB60K

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VCES

VECR

VGE

IC

IC

ICM ( )

PTOT

Collector-Emitter Voltage (VGS = 0)

Emitter-Collector Voltage

Gate-Emitter Voltage

Collector Current (continuous) at TC = 25°C (#)

Collector Current (continuous) at TC = 100°C (#)

Collector Current (pulsed)

Total Dissipation at TC = 25°C

Derating Factor

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

( ) Pulse width limited by safe operating area

THERMAL DATA

Rthj-case Thermal Resistance Junction-case Max

Rthj-amb Thermal Resistance Junction-ambient Max

Value

600

20

±20

10

6

24

50

0.4

– 55 to 150

150

Unit

V

V

V

A

A

A

W

W/°C

°C

°C

TO-220

2.5

62.5

DPAK

100

°C/W

°C/W

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

MAIN PARAMETERS

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

VBR(CES) Collector-Emitter Breakdown IC = 250 µA, VGE = 0

600

V

Voltage

ICES

Collector cut-off

(VGE = 0)

VCE = Max Rating, TC = 25 °C

VCE = Max Rating, TC = 125 °C

50

µA

500

µA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ±20V , VCE = 0

±100

nA

VGE(th) Gate Threshold Voltage

VCE = VGE, IC = 250µA

5

7

V

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC = 3 A

VGE = 15V, IC = 3 A, Tj =125°C

2.3

2.8

V

1.9

V

2/11

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