BUZ11FI 데이터 시트보기 (PDF) - STMicroelectronics

부품명

상세내역

제조사

BUZ11FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STMicroelectronics 

BUZ11

BUZ11FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

TYPE

BUZ11

BUZ11FI

VDSS

50 V

50 V

R DS( on)

< 0.04 Ω

< 0.04 Ω

ID

36 A

21 A

s TYPICAL RDS(on) = 0.03 Ω

s AVALANCHE RUGGED TECHNOLOGY

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW GATE CHARGE

s HIGH CURRENT CAPABILITY

s 175oC OPERATING TEMPERATURE

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s REGULATORS

s DC-DC & DC-AC CONVERTERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

3

2

1

TO-220

ISOWATT220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

P ar amete r

VD S

VDG R

VGS

ID

IDM

Ptot

V I SO

Tstg

Tj

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T c = 25 oC

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

DIN Humidity Category (DIN 40040)

IEC Climatic Category (DIN IEC 68-1)

May 1993

Val ue

BUZ11

BUZ11FI

50

50

± 20

36

21

144

144

120

40



2000

-65 to 175

175

E

55/ 15 0/ 56

Unit

V

V

V

A

A

W

V

oC

oC

1/8

Share Link: