STD5NM50 데이터 시트보기 (PDF) - STMicroelectronics
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STD5NM50 Datasheet PDF : 10 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 250V, ID = 2.5A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDD = 400V, ID = 7.5A
VGS = 10V
Qgd
Gate-Drain Charge
SWITCHING OFF
Symbol
Parameter
tr(Voff)
Off-voltage Rise Time
tf
Fall Time
tc
Cross-over Time
Test Conditions
VDD = 400V, ID = 5A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 5)
STD5NM50/STD5NM50-1
Min. Typ. Max. Unit
16
ns
8
ns
13
nC
5
nC
6
nC
Min. Typ. Max. Unit
14
ns
6
ns
13
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 7.5A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5A, di/dt = 100A/µs,
VDD = 100V, Tj = 25°C
(see test circuit, Figure 5)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 5A, di/dt = 100A/µs,
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
Typ.
185
1.1
11.5
270
1.6
12
Max.
7.5
30
1.5
Unit
A
A
V
ns
µC
A
ns
µC
A
3/10
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