STP16NB25 데이터 시트보기 (PDF) - STMicroelectronics
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STP16NB25 Datasheet PDF : 9 Pages
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STP16NB25/FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Delay Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 125 V
ID = 8 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
VDD = 200 V ID = 16 A VGS = 10 V
Min.
Typ.
12
12
29
9
11
Max.
38
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
td(off)
tf
P ar am et e r
Turn-off Delay Time
Fall Time
tr (Voff)
tf
tc
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 125 V
ID = 8 A
RG = 4.7 Ω
VGS = 10 V
(Resistive Load, see fig. 3)
VCLAMP = 200 V
ID = 16 A
RG = 4.7 Ω
VGS = 10 V
(Induct ive Load, see fig. 5)
Min.
Typ.
35
8
10
9
20
Max.
Unit
ns
ns
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
ISD
ISDM (•)
VSD (∗)
trr
Qrr
I R RM
P ar am et e r
Source-drain Current
Source-drain Current
( pu ls ed)
Forward On Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Test Conditions
ISD = 16 A VGS = 0
ISD = 16 A
VDD = 50 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, fig. 5)
Min.
Typ.
Max.
16
64
1.5
210
1.5
14
Unit
A
A
V
ns
µC
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
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