IXBK64N250 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXBK64N250 Datasheet PDF : 6 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
gfS
IC = IC110, VCE = 10V, Note 1
40
72
S
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
8900
pF
345
pF
118
pF
Qg
Qge
IC = IC110, VGE = 15V, VCE = 600V
Qgc
400
nC
46
nC
155
nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 128A, VGE = 15V, tp = 1μs
VCE = 1250V, RG = 1Ω
49
318
232
170
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = 128A, VGE = 15V, tp = 1μs
VCE = 1250V, RG = 1Ω
54
578
222
175
ns
ns
ns
ns
RthJC
RthCS
0.17 °C/W
0.15
°C/W
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = IC110, VGE = 0V, Note 1
trr
IF = IC110, VGE = 0V, -diF/dt = 650A/μs
IRM
VR = 600V, VGE = 0V
Characteristic Values
Min. Typ. Max
3.0 V
160
ns
480
A
IXBK64N250
IXBX64N250
TO-264 Outline
Dim.
Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c 0.53 0.83
D 25.91 26.16
E 19.81 19.96
e
5.46 BSC
J 0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Terminals: 1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
.238 .248
.062 .072
PLUS247TM Outline
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Additional provisions for lead-to-lead isolation are required at VCE >1200V.
Terminals: 1 - Gate
2 - Collector
3 - Emitter
Dim. Millimeter
Min. Max.
A 4.83 5.21
A1 2.29 2.54
A2 1.91 2.16
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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