IXBK64N250 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXBK64N250 Datasheet PDF : 6 Pages
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High Voltage, High Gain
BiMOSFETTM
Monolithic Bipolar
MOS Transistor
IXBK64N250
IXBX64N250
VCES =
I
=
C110
≤ VCE(sat)
2500V
64A
3.0V
TO-264 (IXBK)
Symbol
VCES
VCGR
VGES
VGEM
IC25
ILRMS
IC100
ICM
SSOA
(RBSOA)
TSC
(SCSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
2500
V
2500
V
±25
V
±35
V
TC = 25°C (Chip Capability)
Lead Current Limit, RMS
156
A
120
A
TC = 110°C
TC = 25°C, 1ms
64
A
600
A
VGE= 15V, TVJ = 125°C, RG = 1Ω
ICM = 160
A
Clamped Inductive Load
VCE < 0.8 • VCES
VGE = 15V, TJ = 125°C,
RG = 5Ω, VCE = 1250V, Non-Repetitive
10
μs
TC = 25°C
735
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
Mounting Torque (TO-264 )
Mounting Force (PLUS247 )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 1mA, VGE = 0V
VGE(th)
IC = 4mA, VCE = VGE
ICES
IGES
VCE(sat)
VCE = 0.8 • VCES, VGE = 0V
TJ = 125°C
VCE = 0V, VGE = ± 25V
IC = IC110, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
2500
V
3.0
5.0 V
50 μA
6 mA
±200 nA
2.5 3.0 V
3.1
V
G
C
E
Tab
PLUS247TM (IXBX)
G
C
E
Tab
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z High Blocking Voltage
z Low Switching Losses
z High Current Handling Capability
z Anti-Parallel Diode
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies (UPS)
z Capacitor Discharge Circuits
z Laser Generators
© 2011 IXYS CORPORATION, All Rights Reserved
DS99832B(08/11)
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