IXBH24N170 데이터 시트보기 (PDF) - IXYS CORPORATION
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IXBH24N170 Datasheet PDF : 5 Pages
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Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
gfs
IC = IC110, VCE = 10V, Note 1
15
25
S
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
2790
pF
163
pF
60
pF
Qg(on)
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
140
nC
16
nC
60
nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 850V, RG = 10Ω
33
82
315
750
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = IC110, VGE = 15V
VCE = 850V, RG = 10Ω
35
155
325
960
ns
ns
ns
ns
RthJC
RthCS
TO-247
0.50 °C/W
0.21
°C/W
IXBT24N170
IXBH24N170
TO-268 Outline
Terminals: 1 - Gate
2,4 - Collector
3 - Emitter
TO-247 Outline
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = 24A, VGE = 0V
trr
IF = 12A, VGE = 0V, -diF/dt = 100A/μs
IRM
VR = 100V
Characteristic Values
Min. Typ. Max.
2.8 V
1.06
μs
26
A
123
∅P
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Dim. Millimeter
Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13
b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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