2N5551G-X-AB3-R 데이터 시트보기 (PDF) - Bruckewell Technology LTD
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2N5551G-X-AB3-R Datasheet PDF : 3 Pages
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ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Dissipation
Collector Dissipation
TO-92
625
mW
SOT-89
PC
500
mW
Collector Current
IC
600
mA
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage BVCBO IC=100μA, IE=0
180
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0
160
Emitter-Base Breakdown Voltage
BVEBO IE=10μA, IC=0
6
Collector Cut-off Current
ICBO VCB=120V, IE=0
Emitter Cut-off Current
IEBO VBE=4V,IC=0
DC Current Gain(Note)
hFE1 VCE=5V, IC=1mA
80
hFE2 VCE=5V, IC=10mA
80
hFE3 VCE=5V, IC=50mA
80
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Base-Emitter Saturation Voltage
VBE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
Current Gain Bandwidth Product
fT VCE=10V, IC=10mA, f=100MHz 100
Output Capacitance
Cob VCB=10V, IE=0 f=1MHz
Noise Figure
NF
IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty cycle<2%
CLASSIFICATION OF hFE
RANK
RANGE
A
80-170
B
150-240
TYP MAX UNIT
V
V
V
50
nA
50
nA
160
400
0.15
V
0.2
1
1
V
300 MHz
6.0
pF
8
dB
C
200-400
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