2N5551 데이터 시트보기 (PDF) - KEXIN Industrial

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2N5551

NPN Transistors

KEXIN Industrial 

DIP Type

NPN Transistors

2N5551

Features

Switching and amplification in high voltage

Applications such as telephony

Low current(max. 600mA)

High voltage(max.180V)

Transistors

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

Symbol

Rating

Unit

VCBO

180

V

VCEO

160

V

VEBO

6

V

IC

0.6

A

Pc

625

mW

TJ, Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Collector-base breakdown voltage

VCBO IC = 100 ìA, IE = 0

Collector-emitter breakdown voltage *

VCEO IC = 1.0 mA, IB = 0

Emitter-base breakdown voltage

VEBO IE = 10 ìA, IC = 0

Collector cutoff current

ICBO VCB = 120 V, IE = 0

Emitter cutoff current

IEBO VEB = 4.0 V, IC = 0

IC = 1.0 mA, VCE = 5 V

DC current gain *

hFE IC = 10 mA, VCE = 5 V

IC = 50 mA, VCE = 5 V

Collector-emitter saturation voltage *

IC = 10 mA, IB = 1 mA

VCE(sat)

IC = 50 mA, IB = 5mA

Base-emitter saturation voltage *

IC = 10 mA, IB = 1 mA

VBE(sat)

IC =50 mA, IB = 5 mA

Transiston frequency

fT VCE=10V,IC=10mA,f=100MHz

Collector output capacitance

Cob VCB=10V,IE=0,f=1MHz

Input capacitance

Cib VBE=0.5V,IC=0,f=1MHz

Noise figure

NF VCE=5V,Ic=0.25mA,f=10Hz to

15.7KHz,Rs=1k

* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.

Min Typ Max Unit

180

V

160

V

6

V

50 nA

50 nA

80

80

250

30

0.15

V

0.2

1.0

V

1.0

100

300 MHz

6 pF

20 pF

8 dB

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