S9011 데이터 시트보기 (PDF) - Shenzhen Luguang Electronic Technology Co., Ltd
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S9011 Datasheet PDF : 2 Pages
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S9011
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Collector Current.(IC= 30mA）
z Power dissipation.(PC=200mW)
APPLICATIONS
z AM converter, AM/FM if amplifier general purpose
transistor
ORDERING INFORMATION
Type No.
Marking
S9011
1T
A
K
D
G
C
E
B
J
H
Package Code
SOT-23
SOT-23
Dim
Min
Max
A
2.70
3.10
B
1.10
1.50
C
1.0 Typical
D
0.4 Typical
E
0.35
0.48
G
1.80
2.00
H
0.02
0.1
J
0.1 Typical
K
2.20
2.60
All Dimensions in mm
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
30
VEBO
IC
PC
Tj,Tstg
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
5
30
200
-55 to +150
Units
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
IC=100μA,IE=0
IC=0.1mA,IB=0
IE=100μA,IC=0
VCB=50V,IE=0
VEB=5V,IC=0
VCE=5V,IC=1mA
IC=10mA, IB= 1mA
VCE=5V,IC=1mA
VCE=5V, IC= 1mA
50
V
30
V
5
V
0.1 μA
0.1 μA
28 198
0.3 V
0.65 0.75 V
150
MHz
CLASSIFICATION OF hFE(1)
Rank
D
E
F
G
H
I
Range
28-45
39-60
54-80
72-108
97-146
132-198
Revision:20170701-P1
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mail:lge@lgesemi.com
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