SS8050W 데이터 시트보기 (PDF) - SHIKE Electronics

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SS8050W

TRANSISTOR (NPN)

SHIKE Electronics 

SS8050W TRANSISTOR

FEATURES

Complimentary to SS8550W

MARKING: Y1

(NPN)

SS8050W

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

SOT–323

1. BASE 2. EMITTER 3. COLLECTOR

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

40

25

5

1.5

0.2

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Symbol

Test conditions

V(BR)CBO IC= 100μA, IE=0

V(BR)CEO IC= 0.1mA, IB=0

V(BR)EBO IE=100μA, IC=0

ICBO

VCB=40V, IE=0

ICEO

VCB=20V, IE=0

IEBO

VEB= 5V, IC=0

hFE(1)

VCE=1V, IC= 100mA

hFE(2)

VCE=1V, IC= 800mA

VCE(sat) IC=800mA, IB= 80mA

VBE(sat)

fT

IC=800mA, IB= 80mA

VCE=10V, IC= 50mA

f=30MHz

MIN

TYP MAX UNIT

40

V

25

V

5

V

0.1

μA

0.1

μA

0.1

μA

120

400

40

0.5

V

1.2

V

100

MHz

CLASSIFICATION OF hFE(1)

RANK

RANGE

L

120–200

H

200–350

J

300–400

REV.08

1 of 3

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