R6576ENZ4 데이터 시트보기 (PDF) - ROHM Semiconductor

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R6576ENZ4

Nch 650V 76A Power MOSFET

ROHM Semiconductor 

R6576ENZ4

　 　 　 　　 　

lThermal resistance

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

　 　 　 　 　 　 　 　 Datasheet

　

　 　　　　　　　　　　　　　　　　

Symbol

RthJC*4

RthJA

Tsold

Values

Unit

Min. Typ. Max.

-

- 0.17 ℃/W

-

- 30 ℃/W

-

- 265 ℃

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = 1mA

650 -

-

V

Zero gate voltage

drain current

Gate - Source leakage current

Gate threshold voltage

Static drain - source

on - state resistance

Gate resistance

VDS = 600V, VGS = 0V

　

　

　

IDSS Tj = 25°C

-

- 100 μA

Tj = 125°C

-

- 1000

IGSS VGS = ±20V, VDS = 0V

-

- ±100 nA

VGS(th) VDS = VGS, ID = 2.96mA 2.0

-

4.0

V

VGS = 10V, ID = 44.4A

　

　

　

RDS(on)*5 Tj = 25°C

- 0.040 0.046 Ω

Tj = 125°C

- 0.080 -

RG f = 1MHz, open drain

- 0.7 - Ω

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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