P0460BTF 데이터 시트보기 (PDF) - Unspecified

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P0460BTF

N-Channel Enhancement Mode MOSFET

Unspecified 

P0460BTF / P046BTFS

N-Channel Enhancement Mode MOSFET

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

MIN TYP MAX

STATIC

Drain-Source Breakdown Voltage V(BR)DSS

VGS = 0V, ID = 250mA

600

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250mA

2.5 3.5 4.5

Gate-Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

Gate Voltage Drain Current

IDSS

VDS = 600V, VGS = 0V, TJ = 25 °C

VDS = 480V, VGS = 0V , TJ = 125 °C

1

10

Drain-Source On-State

RDS(ON)

VGS = 10V, ID = 2A

2.6

Forward Transconductance1

gfs

VDS = 10V, ID = 2A

3

DYNAMIC

Input Capacitance

Ciss

623

Output Capacitance

Coss

VGS = 0V, VDS = 25V, f = 1MHz

98

Reverse Transfer Capacitance

Crss

24

Turn-On Delay Time2

td(on)

15

Rise Time2

Turn-Off Delay Time2

tr

td(off)

VDD = 300V, ID = 4A, RG = 6Ω

47

45

Fall Time2

tf

56

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)

Continuous Current

IS

15

Forward Voltage1

VSD

IF = 4A, VGS = 0V

1.6

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

IF = 4A , dlF/dt = 100A / μS

322

3.2

1Pulse test : Pulse Width  300 msec, Duty Cycle  2％.

2Independent of operating temperature.

UNIT

V

nA

mA

Ω

S

pF

nS

A

V

nS

μC

Ver 1.0

2

2012/4/16

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