8N65M5(2012) 데이터 시트보기 (PDF) - STMicroelectronics

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8N65M5
(Rev.:2012)

N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages

STMicroelectronics 

Electrical characteristics

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on-resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

ID=250 µA

AM08204v1

RDS(on)

(norm)

VGS=10V

ID=3.5A

AM08205v1

2.0

1.00

1.5

0.90

0.80

1.0

0.70

-50 -25 0 25 50 75 100 TJ(°C)

0.5

-50 -25 0 25 50 75 100 TJ(°C)

Figure 16. Switching losses vs gate resistance Figure 17. Normalized BVDSS vs temperature

(1)

E

(μJ)

ID=4A

VCL=400V

VGS=10V

100

10

AM08206v1

Eoff

Eon

1

0

10

20

30

40

1. Eon including reverse recovery of a SiC diode

RG(Ω)

VDS

(norm)

1.08

1.06

ID = 1mA

AM10399v1

1.04

1.02

1.00

0.98

0.96

0.94

0.92

-50 -25 0

25 50 75 100 TJ(°C)

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Doc ID 16531 Rev 5

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