FDB15N50 데이터 시트보기 (PDF) - TY Semiconductor

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FDB15N50

N-Channel SMPS Power MOSFET

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

KDB15N50(FDB15N50)

Electrical Characteristics Ta = 25

Parameter

Drain to source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Drain to source on-state resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Forward Transconductance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain "Miller" Charge

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Reverse Recovery Time

Reverse Recovered Charge

Symbol

VDSS

IDSS

IGSS

VGS(th)

RDS(on)

Ciss

Coss

Crss

gfs

Qg(TOT)

Qgs

Qgd

ton

tr

toff

tf

trr

QRR

Continuous Source Current

IS

Testconditons

ID=250ìA VGS=0V

VDS=500V,VGS=0,TC=25

VGS= 30V

VDS = VGS, ID = 250ìA

VGS=10V,ID=7.5A

VDS=25V,VGS=0,f=1MHZ

VDD = 10V, ID = 7.5A

VGS = 10V,

VDS = 400V,

ID = 15A

ID=15A,RG=6.2 ,VDD=250V,RD=17Ù

ISD = 15A, diSD/dt = 100A/ìs

ISD = 15A, diSD/dt = 100A/ìs

Min Typ Max Unit

500

V

25

A

100 nA

2.0 3.4 4.0 V

0.33 0.38 Ù

1850

pF

230

pF

16

pF

10

S

33 41 nC

7.2 10 nC

12 16 nC

9

ns

5.4

ns

26

ns

5

ns

470 730 ns

5 6.6 ìC

15 A

Pulsed Source Current1

ISM

60 A

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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