KDB3672 데이터 시트보기 (PDF) - KEXIN Industrial
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KDB3672 Datasheet PDF : 2 Pages
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SMD Type
KDB3672 (FDB3672)
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Symbol
VDSS
Drain cut-off current
IDSS
Gate leakage current
Gate threshold voltage
IGSS
VGS(th)
Drain to source on-state resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain "Miller" Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
Ciss
Coss
Crss
Qg(TOT)
Qg(TH)
Qgs
Qgs2
Qgd
tON
td(ON)
tr
td(OFF)
tf
tOFF
VSD
trr
QRR
Testconditons
ID=250ìA VGS=0V
VDS=80V,VGS=0
VDS=80V,VGS=0,TC=150
VGS= 20V
VDS = VGS, ID = 250ìA
VGS=10V,ID=44A
VGS=6V,ID=21A
VGS=10V,ID=44A,TC=175
VDS=25V,VGS=0,f=1MHZ
VGS = 0V to 10V
VGS = 0V to 2V
VDS = 50 V, ID = 44A,Ig=1.0mA
VDD = 50 V, ID = 44A,
VGS = 10 V, RGS = 11.0
ISD=44A
ISD=21A
ISD = 44A, dISD/dt =100A/ìs
ISD = 44A, dISD/dt =100A/ìs
MOSFET
Min Typ Max Unit
100
V
1
A
250
A
100 nA
2.0
4.0 V
0.024 0.028
0.031 0.047 Ù
0.054 0.068
1710
pF
247
pF
62
pF
24 31 nC
3.5 4.5 nC
11
nC
7.2
nC
4.5
nC
104 ns
11
ns
59
ns
26
ns
44
ns
104 ns
1.25 V
1.0 V
52 ns
80 nC
2 www.kexin.com.cn
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