VS-VSKT152/04PBF 데이터 시트보기 (PDF) - Vishay Semiconductors
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VS-VSKT152/04PBF Datasheet PDF : 9 Pages
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VS-VSKT152/04PbF
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC gate
voltage to trigger
Maximum required DC gate
current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
PGM
PG(AV)
IGM
- VGT
TEST CONDITIONS
tp 5 ms, TJ = TJ maximum
f = 50 Hz, TJ = TJ maximum
tp 5 ms, TJ = TJ maximum
TJ = - 40 °C
VGT
TJ = 25 °C
TJ = TJ maximum
TJ = - 40 °C
IGT
TJ = 25 °C
TJ = TJ maximum
Anode supply = 6 V,
resistive load; Ra = 1
VGD
TJ = TJ maximum, rated VDRM applied
IGD
dI/dt
TJ = TJ maximum, ITM = 400 A rated VDRM applied
VALUES
12
3
3
10
4
2.5
1.7
270
150
80
0.3
10
300
UNITS
W
A
V
mA
V
mA
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
TJ
Maximum storage
temperature range
TStg
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
Maximum thermal resistance,
case to heatsink per module
RthCS Mounting surface smooth, flat and greased
Mounting
torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
A mounting compound is recommended and
the torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
Case style
VALUES
-40 to +125
-40 to +150
0.18
0.05
UNITS
°C
K/W
4 to 6
Nm
200
g
7.1
oz.
INT-A-PAK
R CONDUCTION PER JUNCTION
DEVICES
SINUSOIDAL CONDUCTION
AT TJ MAXIMUM
180° 120° 90°
60°
30°
VSKT152/04PbF 0.007 0.010 0.013 0.016 0.017
RECTANGULAR CONDUCTION
AT TJ MAXIMUM
180° 120°
90°
60°
30°
0.009 0.012 0.014 0.016 0.017
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
UNITS
K/W
Revision: 27-Jul-2018
3
Document Number: 94514
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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