HYF31DS1G802BTC 데이터 시트보기 (PDF) - Infineon Technologies

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HYF31DS1G802BTC

MEMORY SPECTRUM

Infineon Technologies 

Nomenclature CellularRAM™

HYE 18

P 16 16 1

A C - 60

(Example)

Speed

Package

Product Revision

Interface

Organization

Memory Density

Memory Type

Supply Voltage

Prefix

C = Chip-size Package

W = Wafer / Known Good Die

Die Revision

0 = Sync / Async / Page

1 = Async / Page only

16 = x 16

16 = 16 Mb

32 = 32 Mb

P = CellularRAM (PSRAM)

18 = 1.8 V VDD / 1.8 – 3.0 V VDDQ

HYE = Extended Temperature

CellularRAM™

Density

16 Mb

Async

Organization Interface

1 M x 16 SRAM

Speed

85 ns

70 ns

70 ns

Sales Description Speed No. Ordering Code

Package

85

HYE18P16161AC-

70

Q67100 Q5098 VFBGA-48

Q67100 Q5099 VFBGA-48

HYE18P16161AW- 70 Q67100 Q5101 Wafer / KGD

Prod. Green

2Q04 X

32 Mb

Async

2 M x 16 SRAM

85 ns

70 ns

70 ns

85 Q67100 Q5103 VFBGA-48

HYE18P32161AC-

70 Q67100 Q5104 VFBGA-48

2Q04

X

HYE18P32161AW- 70 Q67100 Q5106 Wafer / KGD

32 Mb

Sync

80 MHz / 70 ns

12.5 Q67100 Q1802 VFBGA-54

2 M x 16

SRAM

/ Flash

HYE18P32160AC-

66 MHz / 85 ns

15

Q67100 Q5108 VFBGA-54

2Q04

X

66 MHz / 85 ns HYE18P32160AW- 15 Q67100 Q5110 Wafer / KGD

X = Lead-Free

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