HYF31DS1G802BTC 데이터 시트보기 (PDF) - Infineon Technologies
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HYF31DS1G802BTC Datasheet PDF : 28 Pages
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Nomenclature Graphics RAM and Mobile-RAM
HYB 25 D 128 32 3 A C L - 3.3 (Example)
Speed
2.2 = 450 MHz
2.5 = 400 MHz
2.8 = 350 MHz
3.0 = 333 MHz
3.3 = 300 MHz
3.6 = 275 MHz
4.5 = 222 MHz
5
= 200 MHz
7.5 = 133 MHz
8
= 125 MHz
Power Down Current Low-Power Down Current
Package
C
= FBGA
T
= TSOP
E
= TSOP Lead and Halogen-Free
F
= FBGA Lead and Halogen-Free
Product Revision
Die Revision
Interface
0
= LV-TTL Interface
3
= Matched Impedance 2.5 V VDDQ
5
= Matched Impedance 1.8 V VDDQ
Organization
80
=
x8
16
= x 16
32
=
x 32
Memory Density
128 =
256 =
512 =
128 Mb
256 Mb
512 Mb
Memory Type
D
= DDR SDRAM or Graphics RAM
L
= Low-Power SDRAM (Mobile-RAM)
Supply Voltage
18
= 1.8 VVDD
25
=
2.5 VDD / 1.8 VVDD or 2.5 VDDQ
39
=
3.3 VDD / 3.3 VDDQ
Prefix
HYB =
HYE =
Standard Prefix for Memory Components
Prefix for Extended Temperature Version
(- 25 °C – + 85 °C)
22
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