SKM 200GB126D ...
SEMITRANS® 3
Trench IGBT Modules
SKM 200GB126D
SKM 200GAL126D
Features
!
" # $
Typical Applications
%
& %
'()
Characteristics
Symbol Conditions
Inverse diode
<
$< /+0 &8 6 0
- *+ , >
- /*+ , >
<0
- *+ ,
- /*+ ,
<
- *+ ,
- /*+ ,
$334
D
$< /+0 &
%I% +000 &I;
- /*+ ,
6 ?/+ 8 "00
3-? K
FWD
<
<0
<
$334
D
%%
$< /+0 &8 6 0
$< /+0 &
%I% +000 &I;
- *+ , >
- /*+ , >
- *+ ,
- /*+ ,
- *+ ,
- /*+ ,
- /*+ ,
6 ?/+ 8 "00
3-? <K
Module
%%
L
3M@M
>! ?
*+ ,
/*+ ,
3 ?
4
%
N 4"
4
4+
min.
5
*!+
typ.
/!"
/!"
/
0!1
=
+!5
*=0
=*
/!"
/!"
/
0!1
=
+!5
*=0
=*
/+
0!5+
0!+
max. Units
/!1
/!1
/!/
0!2
=!A
B
"
B
&
;
F
0!5
HIJ
/!1
/!1
/!/
0!2
=!A
"
&
;
F
0!5
HIJ
*0
B
B
0!051 HIJ
+
O
+
O
5*+
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
GAL
2
11-09-2006 SEN
© by SEMIKRON