MMFT107T3 데이터 시트보기 (PDF) - ON Semiconductor
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MMFT107T3 Datasheet PDF : 7 Pages
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MMFT107T1
Preferred Device
Power MOSFET
250 mA, 200 Volts
N−Channel SOT−223
This Power MOSFET is designed for high speed, low loss power
switching applications such as switching regulators, dc−dc converters,
solenoid and relay drivers. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement
• The SOT−223 Package can be soldered using wave or reflow.
The formed leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Non−Repetitive
Drain Current
Total Power Dissipation @ TA = 25°C
(Note 1.)
Derate above 25°C
Operating and Storage Temperature
Range
VDSS
VGS
ID
PD
TJ, Tstg
200 Volts
± 20 Volts
250 mAdc
0.8 Watts
6.4
−65 to
150
mW/°C
°C
THERMAL CHARACTERISTICS
Thermal Resistance −
Junction−to−Ambient
RθJA
156
°C/W
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
TL
260
°C
10
Sec
1. Device mounted on FR−4 glass epoxy printed circuit using minimum
recommended footprint.
http://onsemi.com
250 mA
200 VOLTS
RDS(on) = 14 W
N−Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 TO−261AA
CASE 318E
STYLE 3
FT107
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 5
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT107T1
MMFT107T3
SOT−223 1000 Tape & Reel
SOT−223 4000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MMFT107T1/D
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