MTDF1C02HDR2 데이터 시트보기 (PDF) - ON Semiconductor
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MTDF1C02HDR2 Datasheet PDF : 14 Pages
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MTDF1C02HD
ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) (Note 2)
Characteristic
Symbol Polarity Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS − continued (Note 4)
Total Gate Charge
Gate−Source Charge
QT
(VDS = 16 Vdc, ID = 1.7 Adc,
VGS = 4.5 Vdc) (Note 2)
Q1
(N)
−
3.9
5.5
nC
(P)
−
5.3
7.5
(N)
−
0.4
−
(P)
−
0.7
−
Gate−Drain Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
Q2
VGS = 4.5 Vdc) (Note 2)
Q3
(N)
−
1.7
−
(P)
−
2.6
−
(N)
−
1.5
−
(P)
−
1.9
−
SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C)
Forward Voltage (Note 3)
(IS = 1.7 Adc, VGS = 0 Vdc)
VSD
(Note 2)
(IS = 1.2 Adc, VGS = 0 Vdc)
Reverse Recovery Time
trr
(N)
−
0.84
1.0
Vdc
(P)
−
0.89
1.1
(N)
−
29
−
ns
(P)
−
86
−
ta
(IF = IS,
dIS/dt = 100 A/μs) (Note 2)
tb
(N)
−
14
−
(P)
−
27
−
(N)
−
15
−
(P)
−
59
−
Reverse Recovery Stored
Charge
QRR
(N)
−
0.018
−
μC
(P)
−
0.115
−
2. Negative signs for P−Channel device omitted for clarity.
3. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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