MTDF1P02HD 데이터 시트보기 (PDF) - Motorola => Freescale
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MTDF1P02HD Datasheet PDF : 12 Pages
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MTDF1P02HD
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
1 die operating
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Minimum
FR–4 or G–10 PCB
Figure 2 below
1 die operating
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Minimum
FR–4 or G–10 PCB
Figure 2 below
2 die operating
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
Operating and Storage Temperature Range
W Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 20 Vdc, VGS = 4.5 Vdc, Peak IL = 3.6 Apk, L = 25 mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
Symbol
VDSS
VDGR
VGS
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
RTHJA
PD
ID
ID
IDM
TJ, Tstg
EAS
Max
20
20
± 8.0
100
1.25
10
2.3
1.9
19
200
0.63
5.0
1.6
1.3
13
300
0.42
3.33
1.3
1.1
11
– 55 to 150
160
Unit
V
V
V
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C/W
Watts
mW/°C
A
A
A
°C
mJ
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
2
Motorola TMOS Power MOSFET Transistor Device Data
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