IRF740 데이터 시트보기 (PDF) - Nell Semiconductor Co., Ltd
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IRF740 Datasheet PDF : 7 Pages
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SEMICONDUCTOR
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
2500
2000
VGS = 0V, f =1MHz
Ciss = Cgs +Cgd (Cds = shorted )
Crss = Cgd
Coss = Cds +Cgd
1500
Ciss
1000
Coss
500
Crss
0
100
101
Drain-to-Source voltage , VDS (volts)
IRF740 Series RRooHHSS
Nell High Power Products
Fig.6 Typical source-drain diode forward
voltage
150°C
101
25°C
100
10-1
VGS = 0V
0.5
0.7
0.9
1.1
1.3
1.5
Source-to-drain voltage, VSD (volts)
Fig.7 Typical gate charge vs. gate-to-source
voltage
20
lD = 10A
16
VDS = 400V
VDS = 250V
12
VDS = 100V
8
4
For test circuit
See figure 13
0
0
15
30
45
60
75
Total gate charge , QG (nC)
Fig.8 Maximum safe operating area
10³
Operation in This Area is Limited by RDS(ON)
10²
10µs
10
100µs
1
0.1
0.1
1
Note:
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
10
10²
1ms
10ms
10³
Drain-to-Source voltage, VDS (volts)
Fig.9 Maximum drain current vs.
Case temperature
10
8
6
4
2
0
25
50
75
100
125
150
Case temperature, TC (°C)
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Page 4 of 7
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