BFR106 데이터 시트보기 (PDF) - Philips Electronics
부품명
상세내역
제조사
BFR106 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR106
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.
PINNING
PIN
DESCRIPTION
Code: R7p
1 base
2 emitter
3 collector
age
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCEO
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
Vo
output voltage
CONDITIONS
MIN. TYP. MAX. UNIT
open emitter
open base
−
−
20
V
−
−
15
V
−
−
100 mA
up to Ts = 70 °C; note 1
−
IC = 50 mA; VCE = 9 V; Tamb = 25 °C 25
IC = 50 mA; VCE = 9 V; f = 500 MHz; −
Tamb = 25 °C
IC = 30 mA; VCE = 6 V; f = 800 MHz; −
Tamb = 25 °C
IC = 50 mA; VCE = 9 V; RL = 75 Ω;
−
Tamb = 25 °C; dim = −60 dB;
f(p+q−r) = 793.25 MHz
−
500 mW
80 −
5
−
GHz
11.5 −
dB
350 −
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 70 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
3
100
500
150
175
UNIT
V
V
V
mA
mW
°C
°C
September 1995
2
Share Link: 