2N2222AUA 데이터 시트보기 (PDF) - TT Electronics.
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2N2222AUA Datasheet PDF : 3 Pages
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Surface Mount NPN General
Purpose Transistor
2N2222AUA (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Collector‐Base Voltage
Collector‐Emi er Voltage
Emi er‐Base Voltage
Collector Current‐Con nuous
Opera ng Junc on Temperature (TJ)
Storage Junc on Temperature (Tstg)
Power Dissipa on @ TA = 25°C
Power Dissipa on @ Tc = 25° C
Soldering Temperature (vapor phase reflow for 30 seconds)
Soldering Temperature (heated collet for 5 seconds)
75V
50V
6.0V
800mA
‐65° C to +200 °C
‐65° C to +200° C
0.5 W
1.16 W(1)
215° C
260° C
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX
OFF CHARACTERISTICS
V(BR)CBO Collector‐Base Breakdown Voltage
75
V(BR)CEO Collector‐Emi er Breakdown Voltage
50
V(BR)EBO Emi er‐Base Breakdown Voltage
ICBO Collector‐Base Cutoff Current
6.0
10
10
IEBO Emi er‐Base Cutoff Current
10
ICES Collector Emi er Cutoff Current
50
ON CHARACTERISTICS
50
75 325
hFE Forward‐Current Transfer Ra o
100
100 300
30
35
Note:
1. Derate linearly 6.6 mW/°C above 25° C
2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0%
UNITS
TEST CONDITIONS
V IC = 10 µA, IE = 0
V IC = 10 mA, IB = 0
V IE = 10 µA, IC = 0
nA VCB = 60 V, IE = 0
µA VCB = 60 V, IE = 0, TA = 150° C
nA VEB = 4 V, IC = 0
nA VCE = 50 V
‐ VCE = 10 V, IC = 0.1 mA
‐ VCE = 10 V, IC = 1.0 mA
‐ VCE = 10 V, IC = 10 mA
‐
VCE = 10 V, IC = 150 mA(2)
‐
VCE = 10 V, IC = 500 mA(2)
‐ VCE = 10 V, IC = 10 mA, TA = ‐55°C
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 08/2016 Page 2
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