KTD1898-O-TP 데이터 시트보기 (PDF) - Micro Commercial Components
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KTD1898-O-TP Datasheet PDF : 2 Pages
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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Features
• Halogen free available upon request by adding suffix "-HF"
• High VCEO, VCEO=80V
• High IC, IC=1.0A(DC)
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
PC
R thJA
TJ
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, DC
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
80
100
5.0
1.0
0.5
250
-55 to +150
-55 to +150
Unit
V
V
V
A
W
OC/W
OC
OC
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Typ Max Units
OFF CHARACTERISTICS
VCEO
VCBO
Collector-Emitter Breakdown Voltage 80 ---
(IC=1.0mAdc,IB=0)
Collector-Base Breakdow n Voltage 100 ---
---
---
Vdc
Vdc
(IC=100uAdc,IE=0)
VEBO
Emitter-Base Breakdown Voltage
5.0
---
---
Vdc
(IE=100uAdc,IC=0)
ICBO
Collector Cutoff Current
--- --- 1.0 uAdc
(VCB=80Vdc,IE=0)
IEBO
Emitter Cutoff Current
(VEB=4.0Vdc, IC=0)
---
--- 1.0 uAdc
hFE
DC Current gain
(VCE=3.0Vdc, IC=0.5Adc)
70 --- 400 ---
VCE(sat)
Collector-Emitter Saturation Voltage
--- --- 0.4 Vdc
(IC/IB=500mA/20mA)
fT
Transition Frequency
(VCE=10Vdc, IC=50mAdc,
--- 100 --- MHz
f=100MHz)
Cob
Output Capacitance
---
20 ---
pF
(VCB=10Vdc, IE=0, f=1.0MHz)
KTD1898-O
KTD1898-Y
KTD1898-GR
NPN Silicon
Powe r Transistors
SOT-89
A
B
K
E
C
D
G
H
J
F
1
2
3
1. BASE
2. COLLECTOR
3. EMITTER
.061
1.55
25
REF.
CLASSIFICATION OF hFE
Rank
O
Range
70-140
Marking
ZO
Y
120-240
ZY
GR
200-400
ZG
Revision: A
www.mccsemi.com
1 of 2
2015/10/21
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