MTB60N06HD 데이터 시트보기 (PDF) - ON Semiconductor
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MTB60N06HD Datasheet PDF : 11 Pages
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MTB60N06HD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 4)
V(BR)DSS
60
−
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 3.0) (Note 4)
IDSS
−
−
IGSS
−
VGS(th)
2.0
−
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 30 Adc)
(Cpk ≥ 3.0) (Note 4)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ =125°C)
Forward Transconductance
(VDS = 4.0 Vdc, ID = 30 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD= 30 Vdc, ID = 60 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(See Figure 15)
(IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25″ from package to center of die)
RDS(on)
−
VDS(on)
−
−
gFS
15
Ciss
−
Coss
−
Crss
−
td(on)
−
tr
−
td(off)
−
tf
−
QT
−
Q1
−
Q2
−
Q3
−
VSD
−
−
trr
−
ta
−
tb
−
QRR
−
LD
−
Internal Source Inductance
LS
−
(Measured from the source lead 0.25″ from package to source bond pad)
2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Typ
Max
Unit
Vdc
−
−
71
−
mV/°C
μAdc
−
10
−
100
nAdc
−
100
3.0
7.0
0.011
−
−
20
4.0
−
0.014
1.0
0.9
−
Vdc
mV/°C
Ohm
Vdc
mhos
1950
2800
pF
660
920
147
300
14
26
ns
197
394
50
102
124
246
51
71
nC
12
−
24
−
21
−
Vdc
0.99
1.0
0.89
−
60
−
ns
36
−
24
−
0.143
−
μC
4.5
−
nH
7.5
−
nH
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