APT8052BLL 데이터 시트보기 (PDF) - Advanced Power Technology
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APT8052BLL Datasheet PDF : 2 Pages
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DYNAMIC CHARACTERISTICS
APT8052 BLL - SLL
Symbol Characteristic
Test Conditions
MIN TYP MAX
Ciss
Coss
Input Capacitance
Output Capacitance
VGS = 0V
VDS = 25V
2040
390
Crss Reverse Transfer Capacitance
f = 1 MHz
65
Qg
Total Gate Charge 3
VGS = 10V
75
Qgs
L Qgd
A td(on)
IC tr
HN td(off)
C tf
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 1.6W
E TE TION SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
NC A Symbol
VA RM IS
D O ISM
A INF VSD
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.])
10
43
13
12
52
15
MIN TYP MAX
15
60
1.3
t rr
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
650
Q rr Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
9.0
dv/dt Peak Diode Recovery dv/dt 5
10
UNIT
pF
nC
ns
UNIT
Amps
Volts
ns
µC
V/ns
THERMAL CHARACTERISTICS
Symbol
RqJC
RqJA
Characteristic
Junction to Case
Junction to Ambient
MIN TYP MAX UNIT
0.42
40
°C/W
1 Repetitive Rating: Pulse width limited by maximum junction
3 See MIL-STD-750 Method 3471
temperature.
4 Starting Tj = +25°C, L = 10.75mH, RG = 25W, Peak IL = 15A
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS £ -ID[Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
TO-247 Package Outline
D3PAK Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
5.38 (.212)
6.20 (.244)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
Gate
Drain
Source
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
1.04 (.041)
1.15 (.045)
13.41 (.528)
13.51 (.532)
0.46
0.56
(.018)
(.022)
{3
Plcs}
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
Revised
4/18/95
13.79 (.543)
13.99 (.551)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT's devices are covered by one or more of the following U.S.patents:
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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