SMD Type
Transistors
Epitaxial Planar NPN Transistor
KTC3875
■ Features
● Excellent hFE Linearity
hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
●Low Noise : NF=1dB(Typ.), 10dB(Max.).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Rating
Unit
VCBO
60
V
VCEO
50
V
VEBO
5
V
IC
150
mA
PC
150
mW
Tj
150
℃
Tstg
-55 to 150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Symbol
Test conditions
Min Typ Max Unit
ICBO VCB=60V, IE=0
0.1 μA
IEBO VEB=5V, IC=0
0.1 μA
hFE VCE=6V, IC=2mA
70
VCE(sat) IC=100mA, IB=10mA
0.1 0.25 V
fT
VCE=10V, IC=1mA
80
700 MHz
Cob VCB=10V, IE=0, f=1MHz
2.0 3.5 pF
NF VCE=6V, IC=0.1mA,f=1kHz, Rg=10KΩ
1.0 10 dB
■ hFE Classification
Marking
Rank
hFE
ALO
O
70~140
ALY
Y
120~240
ALG
GR
200~400
ALL
L
350~700
1
www.kexin.com.cn