C458PD 데이터 시트보기 (PDF) - New Jersey Semiconductor

부품명

상세내역

제조사

C458PD

INVERTER THYRISTOR C458

New Jersey Semiconductor 

TiEU ^£,mL-C-.ona.uatoi

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One..

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

INVERTER THYRISTOR

C458

53nm / 1400V / 2000Arrns / 35us

Type C458 reverse blocking thyristor is suitable for inverter applications. The silicon junction is

manufactured by the all-diffused process and utilizes the field-proven, interdigitated amplifying gate

structure. It is supplied in an industry accepted disc-type package, ready to mount using commercially

available heat dissipators and mechanical clamping hardware.

ON-STATE CHARACTERISTICS

MODEL

C458PD

C458PB

C458P

V /V

DRM ' Y RRM

Oto+125°C

volts

1400

@

-40°C

1300

1200

1100

1000

900

GMMM1 <A>

THERMAL IMPEDANCE

Gate Drive Requirements:

20 V / 20 ohms / O.Sus risetime

5 - 10 us minimum duration

External Clamping Force

5000 - 6000 Ibs.

24.5 - 26.7 kN

MECHANICAL OUTLINE

20° ±5°

B 0•

= 2.96 in (75.2 iraj

= 1.90 in (48.3 ion)

1.0T7 in (27.2 ran)

Share Link: