MMBT3906WT1G 데이터 시트보기 (PDF) - ON Semiconductor
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MMBT3906WT1G Datasheet PDF : 12 Pages
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MMBT3904WT1, NPN, SMMBT3904WT1, NPN, MMBT3906WT1, PNP
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = −1.0 mAdc, IB = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Collector −Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
(IC = −10 mAdc, IE = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
(IE = −10 mAdc, IC = 0)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = −30 Vdc, VEB = −3.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = −0.1 mAdc, VCE = −1.0 Vdc)
(IC = −1.0 mAdc, VCE = −1.0 Vdc)
(IC = −10 mAdc, VCE = −1.0 Vdc)
(IC = −50 mAdc, VCE = −1.0 Vdc)
(IC = −100 mAdc, VCE = −1.0 Vdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
(IC = −10 mAdc, IB = −1.0 mAdc)
(IC = −50 mAdc, IB = −5.0 mAdc)
MMBT3904WT1, SMMBT3904WT1
MMBT3906WT1
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
VCE(sat)
VBE(sat)
Min
Max
40
−
−40
−
60
−
−40
−
6.0
−
−5.0
−
−
50
−
−50
−
50
−
−50
40
−
70
−
100
300
60
−
30
−
60
−
80
−
100
300
60
−
30
−
−
0.2
−
0.3
−
−0.25
−
−0.4
0.65
−
−0.65
−
0.85
0.95
−0.85
−0.95
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
−
Vdc
Vdc
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