MJE13005DR7 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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MJE13005DR7

Silicon NPN transistor in a TO-220 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MJE13005DR7

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

PC(Tc=25℃)

Tj

Tstg

DATA SHEET

数值

Rating

700

400

9.0

4.0

2.0

75

150

-55～150

单位

Unit

V

V

V

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown Voltage

Emitter Base Cut-Off Current

Collector Cut-Off Current

Collector cut-off current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Saturation Voltage

符号

Symbol

VCBO

VCEO

VEBO

ICBO

ICEO

IEBO

hFE

VCE(sat)

VBE(sat)

Transition Frequency

fT

Fall time

tf

Storage time

ts

测试条件

Test Conditions

IC=1mA

IE=0

IC=10mA

IE=1mA

VCB=700V

VCE=400V

VEB=9.0V

VCE=5.0V

IC=2.0A

IC=2.0A

VCE=10V

f=1.0MHz

VCE=5V

(UI9600)

IB=0

IC=0

IE=0

IB=0

IC=0

IC=1.0A

IB=0.5A

IB=0.5A

IC=0.5A

IC=0.5A

最小值 典型值 最大值 单位

Min Typ Max Unit

700

V

400

V

9.0

V

0.1 mA

0.1 mA

0.1 mA

10

40

0.8 V

1.2 V

7.0

MHz

0.8 μs

4.0 μs

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