MJE13005DP1 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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MJE13005DP1

Silicon NPN transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MJE13005DP1

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

850

450

9.0

3.5

1.2

150

-65～150

单位

Unit

V

V

V

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Forward Voltage

Collector cut-off current

Emitter Base Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Saturation Voltage

Fall time

Storage time

符号

Symbol

VCBO

VCEO

VEBO

VF

ICEO

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)(1)

VCE(sat)(2)

VBE(sat)

tf

ts

测试条件

Test Conditions

IC=1mA

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

850

V

IC=10mA IB=0

450

V

IE=1mA

IC=0

9.0

IF=1.5A

VCB=850V

VCE=450V IB=0

VCE=5.0V IC=10mA 7

VCE=5.0V IC=0.5A

20

VCE=5.0V IC=3.5A

5

IC=1.0A

IB=0.2A

IC=3.0A

IB=0.75A

IC=2.0A

IB=0.5A

VCC=5V

(UI9600)

IC=0.25A 3.5

V

2.6 V

100 μA

250 μA

40

0.5 V

1.5 V

1.6 V

4.5 μs

0.5 μs

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