2SC1008 데이터 시트보기 (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SC1008

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

(/(&75,&$/ &+$5$&7(5,67,&6

Ta=25 Я unless otherwise specified

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE

VCE(sat)

VBE (sat)

Cob

fT

Test conditions

IC= 0.1mA,IE=0

IC=10mA,IB=0

IE=0.01mA,IC=0

VCB=60V,IE=0

VEB=5V,IC=0

VCE=2V, IC=50mA

IC=500mA,IB=50mA

IC=500mA,IB=50mA

VCB=10V,IC=0, f=1MHz

VCE=10V,IC= 50mA

Min Typ Max Unit

80

V

60

V

8

V

0.1

ȝA

0.1

ȝA

40

400

0.4

V

1.1

V

8

pF

30

MHz

CLASSIFICATION OF hFE

RANK

R

RANGE

40-80

O

70-140

Y

120-240

G

200-400

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