2SD716 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD716 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SD716
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
100
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
2.0
V
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 5V
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V ; IC= 0
10
μA
hFE
DC Current Gain
IC= 1A ; VCE= 5V
55
160
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
12
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V; ftest= 1.0MHz
100
pF
hFE Classifications
R
O
55-110 80-160
SPTECH website：www.superic-tech.com
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