D716 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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D716

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V (Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V (Max)@IC= 4A

·Complement to Type 2SB686

APPLICATIONS

·Power amplifier applications

·Recommended for 30~35W high-fidelity audio frequency

amplifier output stage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

IE

Emitter Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

6

A

60

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SD716

SPTECH website：www.superic-tech.com

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