ATF-521P8-BLK 데이터 시트보기 (PDF) - HP => Agilent Technologies
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ATF-521P8-BLK
HP => Agilent Technologies
ATF-521P8-BLK Datasheet PDF : 24 Pages
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ATF-521P8 Electrical Specifications
TA = 25°C, DC bias for RF parameters is Vds = 4.5V and Ids = 200 mA unless otherwise specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Vgs
Operational Gate Voltage
Vds = 4.5V, Ids = 200 mA
V
—
0.62
Vth
Threshold Voltage
Vds = 4.5V, Ids = 16 mA
V
—
0.28
Idss
Saturated Drain Current
Vds = 4.5V, Vgs = 0V
µA
—
14.8
Gm
Transconductance
Vds = 4.5V, Gm = ∆Idss/∆Vgs; mmho
—
1300
Vgs = Vgs1 - Vgs2
Vgs1 = 0.55V, Vgs2 = 0.5V
Igss
Gate Leakage Current
Vds = 0V, Vgs = -4V
µA
-20
0.49
NF
Noise Figure [1]
f = 2 GHz
f = 900 MHz
dB
—
1.5
dB
—
1.2
G
Gain [1]
f = 2 GHz
f = 900 MHz
dB
15.5
17
dB
—
17.2
OIP3
Output 3rd Order
Intercept Point[1]
f = 2 GHz
f = 900 MHz
dBm
38.5
42
dBm
—
42.5
P1dB
Output 1dB
Compressed[1]
f = 2 GHz
f = 900 MHz
dBm
25
26.5
dBm
—
26.5
PAE
Power Added Efficiency
f = 2 GHz
f = 900 MHz
%
45
60
%
—
56
ACLR
Adjacent Channel Leakage
Power Ratio[1,2]
Offset BW = 5 MHz
Offset BW = 10 MHz
dBc
—
-51.4
dBc
—
-61.5
Notes:
1. Measurements obtained using production test board described in Figure 6.
2. ACLR test spec is based on 3GPP TS 25.141 V5.3.1 (2002-06)
– Test Model 1
– Active Channels: PCCPCH + SCH + CPICH + PICH + SCCPCH + 64 DPCH (SF=128)
– Freq = 2140 MHz
– Pin = -5 dBm
– Chan Integ Bw = 3.84 MHz
Max.
—
—
—
—
—
—
—
18.5
—
—
—
—
—
—
—
—
—
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag = 0.55
Γ_ang = -166°
(1.1 dB loss)
Output
Matching Circuit
DUT
Γ_mag = 0.35
Γ_ang = 168°
(0.9 dB loss)
50 Ohm
Transmission
Line and
Drain Bias T
(0.3 dB loss)
Output
Figure 6. Block diagram of the 2 GHz production test board used for NF, Gain, OIP3 , P1dB and PAE and ACLR measurements. This circuit achieves a
trade-off between optimal OIP3, P1dB and VSWR. Circuit losses have been de-embedded from actual measurements.
3
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