MUBW25-06A6K 데이터 시트보기 (PDF) - IXYS CORPORATION

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MUBW25-06A6K

Converter - Brake - Inverter Module (CBI )

IXYS CORPORATION 

MUBW25-06A6K

Brake Chopper T7

Symbol

VCES

VGES

VGEM

IC25

IC80

Ptot

VCE(sat)

Definitions

collector emitter voltage

max. DC gate voltage

max. transient collector gate voltage

collector current

total power dissipation

collector emitter saturation voltage

VGE(th)

ICES

gate emitter threshold voltage

collector emitter leakage current

IGES

Cies

QG(on)

td(on)

tr

td(off)

tf

Eon

Eoff

ICM

gate emitter leakage current

input capacitance

total gate charge

turn-on delay time

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

reverse bias safe operating area

tSC

(SCSOA)

RthJC

RthCH

short circuit safe operating area

thermal resistance junction to case

thermal resistance case to heatsink

Conditions

continuous

transient

TVJ = 25°C to 150°C

TC = 25°C

TC = 80°C

TC = 25°C

IC = 10 A; VGE = 15 V

TVJ = 25°C

TVJ = 125°C

IC = 0.35 mA; VGE = VCE

TVJ = 25°C

VCE = VCES; VGE = 0 V

TVJ = 25°C

TVJ = 125°C

VCE = 0 V; VGE = ±20 V

VCE = 25 V; VGE = 0 V; f = 1 MHz

VCE = 300 V; VGE = 15 V; IC = 10 A

inductive load

VCE = 300 V; IC = 10 A

VGE = ±15 V; RG = 82 W

TVJ = 125°C

RBSOA; VGE = ±15 V; RG = 82 W

L = 100 µH; clamped induct. load

VCEmax = VCES - LS·di/dt

VCE = 600 V; VGE = ±15 V;

RG = 82 W; non-repetitive

(per IGBT)

TVJ = 125°C

TVJ = 125°C

(per IGBT)

min.

3

Ratings

typ. max. Unit

600 V

±20 V

±30 V

19 A

14 A

75 W

2.0 2.35 V

2.25

V

5V

0.5 mA

0.8

mA

100 nA

600

pF

39

nC

35

ns

40

ns

230

ns

30

ns

0.4

mJ

0.3

mJ

20

A

10

µs

1.7 K/W

0.55

K/W

Brake Chopper D7

Symbol

VRRM

IF25

IF80

VF

Definitions

max. repetitive reverse voltage

forward current

forward voltage

IR

reverse current

IRM

trr

RthJC

RthCH

max. reverse recovery current

reverse recovery time

thermal resistance junction to case

thermal resistance case to heatsink

Conditions

IF = 10 A; VGE = 0 V

VR = VRRM

VR = 300 V; IF = 10 A

diF /dt = -400 A/µs

(per diode)

(per diode)

TVJ = 150°C

TC = 25°C

TC = 80°C

TVJ = 25°C

TVJ = 125°C

TVJ = 25°C

TVJ = 125°C

TVJ = 100°C

min.

Ratings

typ. max. Unit

600 V

21 A

14 A

2.1 V

1.4

V

0.06 mA

0.2

mA

12

A

85

ns

2.5 K/W

0.85

K/W

TC = 25°C unless otherwise stated

IXYS reserves the right to change limits, test conditions and dimensions.

© 2007 IXYS All rights reserved

20071113a

-5

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