BSR302N 데이터 시트보기 (PDF) - Infineon Technologies
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BSR302N Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=3.7 A; V GS=10 V
40
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=30 µA
parameter: I D
2.4
BSR302N
30
98 %
20
typ
10
2
98 %
1.6
typ
1.2
2%
0.8
0.4
0
-60
-20
20
60
100
140
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
103
Ciss
Coss
102
Crss
0
-60
-20
20
60
100
140
T j [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
101
25 °C
100
10-1
10-2
150 °C
150 °C, 98%
25 °C, 98%
101
0
Rev. 1.3
5
10
15
V DS [V]
10-3
20
0
page 6
0.4
0.8
1.2
V SD [V]
1.6
2011-06-01
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