BCW61A 데이터 시트보기 (PDF) - Continental Device India Limited

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BCW61A

SILICON PLANAR EPITAXIAL TRANSISTORS

Continental Device India Limited 

BCW61A BCW61B

BCW61C BCW61D

RATINGS (at TA = 25°C unless otherwise specified)

Limiting values

Collector–emitter voltage (VBE = 0)

Collector–emitter voltage (open base)

Emitter–base voltage (open collector)

Collector current (d.c.)

Base current

Total power dissipation up to Tamb = 25 °C

Storage temperatu re

Junction temperature

–VCES

–VCE0

–VEB0

–IC

–lB

Ptot

Tstg

Tj

max. 32 V

max. 32 V

max. 5 V

max. 200 mA

max. 50 mA

max. 250 mW

–55 to +150 °C

max. 150 ° C

THERMAL RESISTANCE

From junction to ambient

Rth j–a =

500 K/W

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified

Collector–emitter cut–off current

VEB = 0; –VCE = 32 V

VEB = 0; –VCE = 32 V; Tamb = 150 °C

Emitter–base cut–off current

IC = 0; –VEB = 4 V

Saturation voltages

–IC = 10 mA; –lB = 0,25 mA

–ICES <

–ICES <

20 nA

20 mA

–IEB0

<

20 nA

–VCEsat 0,06 to 0,25 V

–VBEsat 0,6 to 0,85 V

–IC = 50mA; –IB = 1,25mA

Transition frequency at f = 100 MHz ·

–VCE = 5 V; –IC = 10 mA

Collector capacitance at f = 1 MHz

–VCB = 10 V; IE: Ie = 0

Emitter capacitance at f = 1 MHz

–VEB = 0,5 V; IC = Ic = 0

Noise figure at RS = 2 kW

–VCE = 5 V; –IC = 200 mA; B = 200 Hz

–VCEsat 0,12 to 0,55 V

–VBEsat 0,68 to 1,05 V

fT

typ. 180 MHz

Cc

typ. 4,5 pF

Ce

typ. 11 pF

typ.

2 dB

F

<

6 dB

D.C. current gain

–VCE = 5 V; –IC = 10 mA

BCW61A 61B 61C 61D

hFE

>

20 30 40 100

–VCE = 5 V; –IC = 2 mA

hFE

>

<

120 180

220 310

250 380

460 630

–VCE = 1 V; –IC = 50mA

hFE

Input impedance

–VCE = 5 V; –IC = 2 mA; f = 1 kHz hie

>

60 80 100 110

typ. 2,7 3,6 4,5 7,5 kW

Continental Device India Limited

Data Sheet

Page 2 of 3

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