DIGITRON SEMICONDUCTORS
MAC250 SERIES, MAC250()3 SERIES
SILICON BIDIRECTIONAL THYRISTORS
Available Non-RoHS (standard) or RoHS compliant (add PBF suffix).
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
MAXIMUM RATINGS
Rating
Peak repetitive off-state voltage
SC251B, MAC250B, MAC250B3
SC251D, MAC250D, MAC250D3
SC251M, MAC250M, MAC250M3
SC251N, MAC250N
RMS on-state current
Peak non-repetitive surge current
(1 cycle, 60Hz)
Circuit fusing considerations
(t = 1ms)
(t = 8.3ms)
Peak gate power
Average gate power
Peak gate power (pulse width = 10µs)
Operating junction temperature range
Storage temperature range
Mounting torque
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
Value
Unit
200
400
Volts
600
800
15
Amps
Amps
100
20
41.5
10
0.5
2
-40 to +115
-40 to +125
30
A2s
Watts
Watts
Amps
°C
°C
In. lb.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
MAC250, SC251
MAC250()3
Symbol
RӨJC
Maximum
2.0
2.3
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25° unless otherwise noted)
Characteristic
Peak blocking current
(VD = Rated VDRM, TC = 25°C)
(VD = Rated VDRM, TC = 115°C)
Peak on-state voltage
(ITM = 21A peak, pulse width = 1ms, duty cycle ≤ 2%)
Critical rate of rise of off-state voltage
(Rated VDRM, exponential waveform, gate open, TC = 115°C)
Critical rate of rise of commutating off-state voltage
(IT(RMS) = rated RMS on-state current, VD = VDRM, commutating di/dt = 8A/ms, gate open)
TC = 84°C, MAC250, SC251
TC = 78°CMAC250()3
DC gate trigger current (continuous dc)
(VD = 12V)
MT2(+),G(+); MT2(-),G(-); RL = 100Ω
MT2(+),G(-), RL = 50Ω
DC gate trigger current (continuous dc)
(VD = 12V, TC = -40°C)
MT2(+),G(+); MT2(-),G(-); RL = 50Ω
MT2(+),G(-), RL = 25Ω
Symbol
IDRM
VTM
dv/dt
dv/dt(c)
IGT
IGT
Min
-
-
-
100
4
4
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
Max
10
0.5
1.65
-
-
-
50
50
80
80
Unit
µA
mA
Volts
V/µs
V/µs
mA
mA
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20130201