SPTECH Product Specification
SPTECH Silicon PNP Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.25A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -5A; IB= -1A
VBE(on) Base-Emitter On Voltage
IC= -2.5A; VCE= -2V
ICEO
Collector Cutoff Current
VCE= -40V; IB= 0
ICBO
Collector Cutoff Current
ICEV
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB= -40V; IE= 0
VCE= -40V; VBE(off)= -1.5V
VCE= -40V; VBE(off)= -1.5V, TC=150℃
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -2.5A; VCE= -2V
hFE-2
DC Current Gain
IC= -5A; VCE= -2V
fT
Current-Gain—Bandwidth Product IC= -1A; VCE= -10V; ftest= 1.0MHz
2N4904
MIN MAX UNIT
-40
V
-1.0
V
-1.5
V
-1.4
V
-1.0
mA
-0.1
mA
-0.1
-2.0
mA
-1.0
mA
25
100
7
4
MHz
SPTECH website:www.superic-tech.com
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