2N6107 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6107 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon PNP Power Transistor
DESCRIPTION
·DC Current Gain-
: hFE = 30-150@ IC= -2A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -70V(Min)
·Complement to Type 2N6292
APPLICATIONS
·Designed for use in general-purpose amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-70
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
ICM
Collector Current-Peak
-10
A
IB
Base Current
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
-3
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
3.125 ℃/W
SPTECH website：www.superic-tech.com
2N6107
1
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