2N5430 데이터 시트보기 (PDF) - Inchange Semiconductor
부품명
상세내역
제조사
2N5430 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5430
DESCRIPTION
·Contunuous Collector Current-IC= 7A
·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.2V(Max) @IC= 7A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching and wide-band amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
4.37
UNIT
℃/W
isc website：www.iscsemi.cn
1
Share Link: 