2N4918 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N4918

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2N4918

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

-40

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A

-0.6

V

VBE(sat) Base-Emitter Saturation Voltage

IC= -1A; IB= -0.1A

-1.3

V

VBE(on) Base-Emitter On Voltage

ICEX

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= -1A ; VCE= -1V

VCE=-40V;VBE(off)= 1.5V

VCE=-40V;VBE(off)= 1.5V;TC=125℃

VCE= -20V; IB= 0

-1.3

V

-0.1

-0.5

mA

-0.5 mA

ICBO

Collector Cutoff Current

VCB= -40V; IE= 0

-0.1 mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-1.0 mA

hFE-1

DC Current Gain

IC= -50mA ; VCE= -1V

40

hFE-2

DC Current Gain

IC= -500mA ; VCE= -1V

30

150

hFE-3

DC Current Gain

IC= -1A ; VCE= -1V

10

fT

Current-Gain—Bandwidth Product IC= -0.25A;VCE= -10V, ftest= 1MHz

3

MHz

COB

Output Capacitance

IE= 0;VCB= -10V; ftest= 100kHz

100 pF

SPTECH website：www.superic-tech.com

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