2N6496 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6496

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB=0.8A

VBE(sat) Base-Emitter Saturation Voltage

IC= 8A; IB=0.8A

VBE(on) Base-Emitter On Voltage

IC= 8A; VCE= 2V

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

hFE

DC Current Gain

IC= 8A; VCE= 2V

Switching times

tr

Rise Time

ts

Storage Time

VCC= 30V, IC= 8A , IB1= -IB2= 0.8A,

tf

Fall Time

2N6496

MIN MAX UNIT

110

V

1.0

V

2.0

V

1.6

V

50 mA

12 100

0.5 μs

1.5 μs

0.5 μs

SPTECH website：www.superic-tech.com

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