2N6255 데이터 시트보기 (PDF) - Microsemi Corporation

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2N6255

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Microsemi Corporation 

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855

RF & MICROWAVE DISCRETE

LOW POWER TRANSISTORS

2N6255

Features

• Silicon NPN, To-39 packaged VHF Transistor

• 3.0 Watt Power Output @ 175 MHz

• Power Gain, GPE = 7.8 dB

• Efficiency = 50%

1. Emitter

2. Base

3. Collector

TO-39

DESCRIPTION:

Silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier; pre-driver, driver, and

output stages. Also suitable for oscillator and frequency-multiplier functions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

Parameter

VCEO

Collector-Emitter

VCBO

Collector-Base Voltage

VEBO

Emitter-Base Voltage

IC

Collector Current

Thermal Data

P

D

Total Device Dissipation @ TA = 25ºC

Derate above 25ºC

Value

18

36

4.0

1

5.0

28.5

Unit

Vdc

Vdc

Vdc

A

Watts

mW/ ºC

MSC1306.PDF 10-25-99

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