SI9426DY-T1 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI9426DY-T1 Datasheet PDF : 4 Pages
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Si9426DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "8 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 10 A
VGS = 2.5 V, ID = 8 A
VDS = 10 V, ID = 10 A
IS = 2.3 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
VDS = 6 V, VGS = 4.5 V, ID = 10 A
VDD = 6 V, RL = 6 W
ID ^ 1 A, VGEN = 4.5 V, RG = 6 W
IF = 2.3 A, di/dt = 100 A/ms
Min Typa Max Unit
0.6
V
"100
nA
1
mA
5
30
A
0.0098 0.0135
W
0.011
0.0160
57
S
0.71
1.2
V
46.5
80
5.5
nC
13.5
1
3.9
W
50
100
110
200
150
300
ns
55
100
59
100
www.vishay.com
2
Document Number: 70160
S-03950—Rev. E, 26-May-03
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