2SD1615-T1 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SD1615-T1 Datasheet PDF : 4 Pages
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2SD1615, 2SD1615A
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.5
2.0
1.5
1.0
0.5
0
40
80
120
160
200
TA – Ambient Temperature – °C
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
300 µA
200 µA
80
200 µA
60
150 µA
40
100 µA
20
IB = 50 µA
SAFE OPERATING AREA
(TRANSIENT THERMAL RESISTANCE
METHOD)
5
1 pulse
2
1
0.5
200 ms
0.2
DC
0.1
0.05
0.02
0.01
12
5 10 20 50 100
VCE – Collector to Emitter Voltage – V
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
1.0
5.0 mA
4.5 mA
4.0 mA 3.5 mA 3.0 mA
0.8
2.5 mA
2.0 mA
0.6
1.5 mA
0.4
1.0 mA
0.2
IB = 0.5 mA
0
2
4
6
8
10
VCE – Collector to Emitter Voltage – V
0
0.2
0.4
0.6
0.8
1.0
VCE(sat) – Collector Saturation Voltage – V
1000
500
200
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2.0 V
COLLECTOR AND BASE SATURATION
VOLTAGE vs. COLLECTOR CURRENT
2
IC = 20·IB
1
VBE(sat)
0.5
100
0.2
50
0.1
20
0.05
VCE(sat)
10
0.02
5
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
0.01 0.02 0.05 0.1 0.2 0.5 1 2
IC – Collector Current – A
5 10
2
Data Sheet D10198EJ4V0DS00
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